(China (Mainland))
Product Summary
The SKM200GB123D is a Low Loss IGBT Module.
Parametrics
SKM200GB123D absolute maximum ratings: (1)VCES: 1200V; (2)IC: TC=25℃:290A, TC=85℃: 200A; (3)ICRM(tp=1ms): 300A; (4)VGES: ±20V; (5)Tvj: -40℃ to +150℃; (6)Tstg: -40℃ to +125℃; (7)Visol: 2500V.
Features
SKM200GB123D features: (1)MOS input; (2)N channel, homogeneous silicon structure NPT-IGBT; (3)low saturation voltage; (4)low inductance case; (5)low tail current with low temperature dependence; (6)high short circuit capability, self limiting to 6* Icnom; (7)latch-up free; (8)isolated copper baseplate using DCB direct copper bonding technology without hard mould.
Diagrams
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 SKM200GAL123DKLD110 |
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SKM200GAL126D |
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SKM200GB124D |
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SKM200GB124DE |
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SKM200GB125D |
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SKM200GB128D |
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Negotiable |
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