Product Summary
The MG75J1ZS40 is a silicon n channel IGBT.
Parametrics
MG75J1ZS40 absolute maximum ratings: (1)Collector Emitter volatge: 600V; (2)Gate Emitter Voltage: 20V; (3)Collector current: 75A; (4)Forward current: 75A; (5)Collector power dissipation: 350W; (6)Junction temperature: 150℃; (7)Storage temperature range: -40 to 125℃; (8)Isolation voltage: 2500V.
Features
MG75J1ZS40 features: (1)High input impedance; (2)High speed: 0.35μs; (3)Low saturation volatge: 3.5V; (4)Enhancement mode; (5)The Electrodes are Isolated from case.
Diagrams
MG750-1.00K-1% |
Caddock Electronics Inc |
RES 1K 1% HIGH VOLT AXIAl 7.5 |
Data Sheet |
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MG750-10.0M-1% |
Caddock |
Thick Film Resistors - Through Hole 10M ohm 1% |
Data Sheet |
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MG750-20M-1% |
Caddock |
Thick Film Resistors - Through Hole |
Data Sheet |
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MG750-402K-1% |
Caddock Electronics Inc |
RES 402K 1% HIGH VOLT AXIAL 7.5 |
Data Sheet |
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MG750-5.00K-1% |
Caddock |
Thick Film Resistors - Through Hole 5K ohm 1% |
Data Sheet |
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MG75P |
Other |
Data Sheet |
Negotiable |
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