(China (Mainland))
Product Summary
The MG150Q2YS65H is a Silicon N Channel IGBT.
Parametrics
MG150Q2YS65H absolute maximum ratings: (1)Collector-emitter voltage, VCES: 1200 V; (2)Gate-emitter voltage, VGES: ±20 V; (3)Collector current, DC, IC: 150A; 1ms, ICP: 300A; (4)Forward current, DC, IF: 150A; 1ms, IFM: 300A; (5)Collector power dissipation (Tc = 25℃), PC: 890 W; (6)Junction temperature, Tj: 150℃; (7)Storage temperature range Tstg: -40 to 125℃; (8)Isolation voltage, VIsol: 2500(AC 1 minute) V; (9)Screw torque, Terminal: 3N·m; Mounting: 3N·m.
Features
MG150Q2YS65H features: (1)High input impedance; (2)Enhancement-mode; (3)The electrodes are isolated from case.
Diagrams
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 MG150Q2YS65H |
Other |
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Data Sheet |
Negotiable |
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Data Sheet |
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