Product Summary

The MG100Q2YS65H is a silicon N channel IGBT. It is suitable for High Power & High Speed Switching Applications.

Parametrics

MG100Q2YS65H absolute maximum ratings: (1)collector-emitter vltage, VCES: 1200V; (2)gate-emitter voltage, VGES: ±20V; (3)collector current, DC, IC: 100A; 1ms, ICP: 200A; (4)forward current, DC, IF: 100A; 1ms, IFM: 200A; (5)collector power dssipation (Tc=25℃), PC: 690W; (6)junction temperature, Tj: 150℃; (7)storage temeprature range, Tstg: -40 to 125℃; (8)isolation voltage, Visol: 2500V; (9)screw torque (terminal/mounting): 3/3Nm.

Features

MG100Q2YS65H features: (1)High input impedance; (2)Enhancement-mode; (3)The electrodes are isolated from case.

Diagrams

MG100Q2YS65H Equivalent Circuit

MG1000E
MG1000E

Other


Data Sheet

Negotiable 
MG1001
MG1001

Other


Data Sheet

Negotiable 
MG1001E
MG1001E

Other


Data Sheet

Negotiable 
MG1002E
MG1002E

Other


Data Sheet

Negotiable 
MG1004
MG1004

Other


Data Sheet

Negotiable 
MG1004E
MG1004E

Other


Data Sheet

Negotiable