Product Summary
The FF200R12KS4 is a 62mm C-Series module with the fast IGBT2 for high-frequency switching.
Parametrics
FF200R12KS4 absolute maximum ratings: (1)collector-emitter voltage: 1200 V; (2)DC-collector current: 275 A; (3)repetitive peak collector current: 400 A; (4)total power dissipation: 1400 W; (5)gate-emitter peak voltage: ± 20 V.
Features
FF200R12KS4 features: (1)High short circuit capability, self limiting short circuit current; (2)Low switching losses; (3)Unbeatable robustness; (4)VCEsat with positive temperature coefficient; (5)Package with CTI > 400; (6)High creepage and clearance distances; (7)Isolated base plate; (8)Copper base plate; (9)Standard housing.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FF200R12KS4 |
Infineon Technologies |
IGBT Modules 1200V 200A DUAL |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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FF200R06KE3 |
Infineon Technologies |
IGBT Modules N-CH 600V 260A |
Data Sheet |
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FF200R06ME3 |
Infineon Technologies |
IGBT Modules IGBT 600V 200A |
Data Sheet |
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FF200R06YE3 |
Infineon Technologies |
IGBT Modules IGBT 600V 200A |
Data Sheet |
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FF200R06YE3ENG |
Infineon Technologies |
IGBT Modules |
Data Sheet |
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FF200R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 200A DUAL |
Data Sheet |
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FF200R12KE3_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 295A |
Data Sheet |
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