Product Summary

The CM100DY-12H is an IGBT Module. It is designed for use in switching applications. The CM100DY-12H consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.

Parametrics

CM100DY-12H absolute maximum ratings: (1)Junction Temperature Tj: –40 to 150℃; (2)Storage Temperature Tstg: –40 to 125℃; (3)Collector-Emitter Voltage (G-E SHORT) VCES: 600 Volts; (4)Gate-Emitter Voltage (C-E SHORT) VGES: ±20 Volts; (5)Collector Current (TC = 25℃) IC: 100 Amperes; (6)Peak Collector Current ICM: 200 Amperes; (7)Maximum Collector Dissipation (TC = 25℃, Tj ≤ 150℃) Pc: 400 Watts.

Features

CM100DY-12H features: (1)Low Drive Power; (2)Low VCE(sat); (3)Discrete Super-Fast Recovery Free-Wheel Diode; (4)High Frequency Operation; (5)Isolated Baseplate for Easy Heat Sinking.

Diagrams

CM100DY-12H block diagram

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