Product Summary

The BUF460AV is an NPN transistor power module.

Parametrics

BUF460AV absolute maximum ratings: (1)VCEV Collector-Emitter Voltage (VBE = -5 V): 1000 V; (2)VCEO(sus) Collector-Emitter Voltage (IB = 0): 450 V; (3)VEBO Emitter-Base Voltage (IC = 0): 7 V; (4)IC Collector Current: 80 A; (5)ICM Collector Peak Current (tp = 10 ms): 160 A; (6)IB Base Current: 18 A; (7)IBM Base Peak Current (tp = 10 ms): 27 A; (8)Ptot Total Dissipation at Tc = 25℃: 270 W; (9)Ts tg Storage Temperature: -65℃ to 150℃; (10)Tj Max Operat ion Junction Temperature: 150℃; (11)VISO Insulat ion Withstand Voltage (AC-RMS): 2500 V.

Features

BUF460AV features: (1)easy to drive technology (etd); (2)high current power bipolar module; (3)verylow rth junction case; (4)specified accidental overload areas; (5)isolatedcase (2500v rms); (6)easy to mount; (7)low internal parasitic inductance.

Diagrams

BUF460AV package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
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Quantity
BUF460AV
BUF460AV

STMicroelectronics

Transistors Bipolar (BJT) NPN Power Module

Data Sheet

0-40: $24.18
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Quantity
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