Product Summary
The BSM50GP120 is an IGBT module.
Parametrics
BSM50GP120 absolute maximum ratings: (1)repetitive peak reverse voltage: 1600V; (2)RMS forward current per chip: 40A; (3)DC forward current: 50A; (4)surge forward current: 400A; (5)collector-emitter voltage: 1200V; (6)DC-collector current: 80A; (7)repetitive peak collector current: 100A; (8)total power dissipation: 360 W; (9)gate-emitter peak voltage: ±20V.
Features
BSM50GP120 features: (1)gate-emitter leakage current: 300nA; (2)turn on delay time (inductive load): 60ns; (3)rise time (inductive load): 45ns; (4)turn off delay time (inductive load): 400ns; (5)fall time (inductive load): 30ns; (6)turn-on energy loss per pulse: 6.5mWs; (7)turn-off energy loss per pulse: 6mWs; (8)SC Data: 300A; (9)peak reverse recovery current: 75A; (10)recovered charge: 12μAs; (11)reverse recovery energy: 4mWs; (12)rated resistance: 5kΩ; (13)deviation of R100: -5% to 5%; (14)power dissipation: 20mW; (15)B-value: 3375K.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM50GP120 |
Infineon Technologies |
IGBT Modules 1200V 50A PIM |
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Image | Part No | Mfg | Description | Pricing (USD) |
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BSM50GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 50A CHOPPER |
Data Sheet |
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BSM50GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 50A DUAL |
Data Sheet |
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BSM50GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 50A DUAL |
Data Sheet |
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BSM50GB170DN2 |
Infineon Technologies |
IGBT Modules 1700V 50A 500W HALF-BRIDGE |
Data Sheet |
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BSM50GB60DLC |
Infineon Technologies |
IGBT Modules 600V 50A DUAL |
Data Sheet |
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BSM50GD120DLC |
Infineon Technologies |
IGBT Modules 1200V 50A 3-PHASE |
Data Sheet |
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