(China (Mainland))
Product Summary
The BSM150GB170DN2 is an IGBT Power Module.
Parametrics
BSM150GB170DN2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1700 V; (2)Collector-gate voltage RGE = 20 kΩ VCGR: 1700 V; (3)Gate-emitter voltage VGE: ± 20 V; (4)DC collector current TC = 25℃ IC: 220 A; (5)DC collector current TC = 80℃ IC: 150 A; (6)Pulsed collector current, tp = 1 ms TC = 25℃ ICpuls: 440 A; (7)Pulsed collector current, tp = 1 ms TC = 80℃ ICpuls: 300 A; (8)Power dissipation per IGBT TC = 25℃ Ptot: 1250 W; (9)Chip temperature Tj: + 150℃; (10)Storage temperature Tstg: -55℃ to + 150℃; (11)Thermal resistance, chip case RthJC ￡ 0.1 K/W; (12)Diode thermal resistance, chip case RthJCD ≤ 0.32 K/W; (13)Insulation test voltage, t = 1min. Vis 4000 Vac; (14)Creepage distance: 20 mm.
Features
BSM150GB170DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate; (4)RG on,min = 10 Ohm.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BSM150GB170DN2 |
Infineon Technologies |
IGBT Modules 1700V 150A DUAL |
Data Sheet |
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BSM150GB170DN2 E3166 |
Other |
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Data Sheet |
Negotiable |
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BSM150GB170DN2_E3166 |
Infineon Technologies |
IGBT Modules N-CH 1.7KV 220A |
Data Sheet |
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BSM150GB170DN2_E3166c-Se |
Infineon Technologies |
IGBT Modules IGBT 1700V 150A |
Data Sheet |
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