Product Summary

The BSM100GB120DN2 is an IGBT power module.

Parametrics

BSM100GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kΩ VCGR: 1200 V; (3)Gate-emitter voltage VGE: ± 20 V; (4)DC collector current TC = 25℃ IC: 150 A; (5)DC collector current TC = 80℃ IC: 100 A; (6)Pulsed collector current, tp = 1 ms TC = 25℃: 300 A; (7)Pulsed collector current, tp = 1 ms TC = 80℃: 200 A; (8)Power dissipation per IGBT TC = 25℃ Ptot: 800 W; (9)Chip temperature Tj: + 150℃.

Features

BSM100GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM100GB120DN2 package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM100GB120DN2
BSM100GB120DN2
Infineon Technologies
IGBT Modules 1200V 100A DUAL
Data Sheet
0-1: $82.74
1-10: $74.47
BSM100GB120DN2_B2
BSM100GB120DN2_B2
Infineon Technologies
IGBT Modules IGBT 1200V 100A
Data Sheet
0-6: $76.20
6-10: $69.00
BSM100GB120DN2E3256
BSM100GB120DN2E3256
Infineon Technologies
IGBT Modules IGBT POWER MODULE
Data Sheet
0-4: $114.50
4-5: $103.04
5-10: $91.60
10-50: $82.43
BSM100GB120DN2_E3254
BSM100GB120DN2_E3254
Infineon Technologies
IGBT Modules IGBT 1200V 100A
Data Sheet
0-6: $79.80
6-10: $72.00
BSM100GB120DN2_E3256
BSM100GB120DN2_E3256
Infineon Technologies
IGBT Modules IGBT 1200V 100A
Data Sheet
0-6: $84.00
6-10: $75.60
BSM100GB120DN2F
BSM100GB120DN2F
Infineon Technologies
IGBT Modules IGBT 1200V 100A
Data Sheet
0-6: $76.20
6-10: $69.00
BSM100GB120DN2K
BSM100GB120DN2K
Infineon Technologies
IGBT Modules 1200V 100A DUAL
Data Sheet
0-1: $66.47
1-5: $63.16
5-10: $59.86
BSM100GB120DN2F_E3256
BSM100GB120DN2F_E3256
Infineon Technologies
IGBT Modules IGBT 1200V 100A
Data Sheet
0-6: $84.00
6-10: $75.60