(China (Mainland))
Product Summary
The 4MBI100T-060 is an IGBT module.
Parametrics
4MBI100T-060 absolute maximum ratings: (1)Collector-Emitter voltage VCES Ic=1mA: 600 V; (2)Gate-Emitter voltage VGES: ±20 V; (3)Collector current Ic Duty=100 %: 100A; (4)Collector current Ic pulse 1ms: 200 A; (5)Collector current IF Duty=50 % 100A; (6)Collector current IF pulse 1ms: 200A; (7)Collector Power Dissipation Pc 1 device: 310 W; (8)Junction temperature Tj: 150℃; (9)Storage temperature Tstg -40℃ to +125℃; (10)Isolation voltage Viso AC : 1min.: 2500 V; (11)Screw Torque Mounting: 3.5 N.m.
Features
4MBI100T-060 features: (1)Zero gate voltage Collector current ICES VGE = 0V, VCE = 600 V: 1.0 mA; (2)Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20 V: 200 nA; (3)Gate-Emitter threshold voltage VGE(th) VCE = 20 V, Ic = 100 mA: 7.7 V; (4)Collector-Emitter saturation voltage VCE(sat) VGE = 15V Ic = 100 A Chip: 2.2 V; (5)Collector-Emitter saturation voltage VCE(sat) VGE = 15V Ic = 100 A Terminal: 2.5 V; (6)Input capacitance Cies VGE = 0 V: 8500 pF; (7)Output capacitance Coes VCE = 10 V: 1500 pF; (8)Reverse transfer capacitance Cres f = 1 MHz: 1300 pF; (9)Turn-on time ton Vcc = 300 V: 1.2 μs; (10)Turn-on time tr Ic = 100 A: 0.6 μs; (11)Turn-on time tr(i) VGE = ±15 V: 0.1 μs.
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