(China (Mainland))
Product Summary
The 2MBI100U4A-120 is an IGBT module.
Parametrics
2MBI100U4A-120 absolute maximum ratings: (1)Collector-Emitter voltage, VCES: 1200V; (2)Gate-Emitter voltage, CES: ±20V; (3)Collector current, Ic: 150A, when the operation condition is Continuous and Tc=25℃; (4)Collector current, Ic: 100A, when the operation condition is Continuous and Tc=80℃; (5)Collector current, Icp: 300A, when the operation condition is 1ms and Tc=25℃; (6)Collector current, Icp: 200A, when the operation condition is 1ms and Tc=80℃; (7)Collector current, -Ic: 100A; (8)Collector current, -Ic pulse: 200A, when the operation condition is 1ms; (9)Collector Power Dissipation, Pc: 540W, when the operation condition is 1DEVICE; (10)Junction temperature, Tj: +150℃; (11)Storage temperature, Tstg: -40 to +125℃; (12)Isolation voltage, between terminal and copper base, Viso: 2500 VAC, when the operation condition is AC: 1min.
Features
2MBI100U4A-120 features: (1)zero gate voltage collector current: 1.0mA; (2)gate-emitter leakage current: 200nA; (3)gate-emitter threshold voltage: 4.5V to 8.5V; (4)input capacitance: 11nF; (5)reverse recovery time: 0.35us; (6)lead resistance, terminal-chip: 1.39mΩ.
Diagrams
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 2MBI100N-060-03 |
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2MBI100NB-120 |
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2MBI100NC-120 |
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2MBI100NE-120 |
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Negotiable |
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2MBI100P-140 |
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Negotiable |
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2MBI100PC-140 |
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Negotiable |
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